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1. product pro?le 1.1 general description npn low v cesat breakthrough in small signal (biss) transistor in a sot223 (sc-73) small surface-mounted device (smd) plastic package. pnp complement: pbss9110z. 1.2 features n low collector-emitter saturation voltage v cesat n high collector current capability i c and i cm n high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications n high-voltage dc-to-dc conversion n high-voltage mosfet gate driving n high-voltage motor control n high-voltage power switches (e.g. motors, fans) n automotive applications 1.4 quick reference data [1] pulse test: t p 300 m s; d 0.02. PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor rev. 02 8 january 2007 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 100 v i c collector current - - 1 a i cm peak collector current single pulse; t p 1ms --3 a r cesat collector-emitter saturation resistance i c =1a; i b = 100 ma [1] - 160 200 m w
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 2 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking 5. limiting values table 2. pinning pin description simpli?ed outline symbol 1 base 2 collector 3 emitter 4 collector 13 2 4 sym016 2, 4 3 1 table 3. ordering information type number package name description version PBSS8110Z sc-73 plastic surface-mounted package with increased heat sink; 4 leads sot223 table 4. marking codes type number marking code PBSS8110Z pb8110 table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 120 v v ceo collector-emitter voltage open base - 100 v v ebo emitter-base voltage open collector - 5 v i c collector current - 1 a i cm peak collector current single pulse; t p 1ms -3a i b base current - 0.3 a p tot total power dissipation t amb 25 c [1] - 0.65 w [2] -1w [3] - 1.4 w
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 3 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 6 cm 2 . t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c (1) fr4 pcb, mounting pad for collector 6 cm 2 (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. power derating curves table 5. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit t amb ( c) 0 160 120 40 80 001aaa508 0.8 0.4 1.2 1.6 p tot (w) 0 (1) (2) (3) table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 192 k/w [2] - - 125 k/w [3] --89k/w r th(j-sp) thermal resistance from junction to solder point --17k/w
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 4 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse duration; typical values fr4 pcb, mounting pad for collector 1 cm 2 fig 3. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa819 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 006aaa820 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 1
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 5 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor fr4 pcb, mounting pad for collector 6 cm 2 fig 4. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa821 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 6 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =80v; i e = 0 a - - 100 na v cb =80v;i e =0a; t j = 150 c --50 m a i ces collector-emitter cut-off current v ce =80v; v be =0v - - 100 na i ebo emitter-base cut-off current v eb =4v; i c = 0 a - - 100 na h fe dc current gain v ce =10v; i c =1ma 150 - - v ce =10v; i c = 250 ma 150 - 500 v ce =10v; i c = 0.5 a [1] 100 - - v ce =10v; i c =1a [1] 80 - - v cesat collector-emitter saturation voltage i c = 100 ma; i b =10ma - - 40 mv i c = 500 ma; i b =50ma [1] - - 120 mv i c =1a; i b = 100 ma [1] - - 200 mv r cesat collector-emitter saturation resistance i c =1a; i b = 100 ma [1] - 160 200 m w v besat base-emitter saturation voltage i c =1a; i b = 100 ma [1] - - 1.05 v v beon base-emitter turn-on voltage v ce =10v; i c =1a [1] - - 0.9 v t d delay time v cc =10v; i c = 0.5 a; i bon = 0.025 a; i boff = - 0.025 a -25- ns t r rise time - 220 - ns t on turn-on time - 245 - ns t s storage time - 365 - ns t f fall time - 185 - ns t off turn-off time - 550 - ns f t transition frequency v ce =10v; i c =50ma; f = 100 mhz 100 - - mhz c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz - - 7.5 pf
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 7 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor v ce =10v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 5. dc current gain as a function of collector current; typical values fig 6. collector current as a function of collector-emitter voltage; typical values v ce =10v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =10 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 7. base-emitter voltage as a function of collector current; typical values fig 8. base-emitter saturation voltage as a function of collector current; typical values 001aaa497 200 400 600 h fe 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) v ce (v) 05 4 23 1 001aaa496 0.8 1.2 0.4 1.6 2 i c (a) 0 31.5 24.5 17.5 10.5 28 21 14 7 3.5 i b (ma) = 35 006aaa986 0.4 0.8 1.2 v be (v) 0 i c (ma) 10 - 1 10 4 10 3 110 2 10 (1) (2) (3) 006aaa987 i c (ma) 10 - 1 10 4 10 3 110 2 10 1 10 v besat (v) 10 - 1 (1) (2) (3)
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 8 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor i c /i b =10 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b =50 (2) i c /i b =20 fig 9. collector-emitter saturation voltage as a function of collector current; typical values fig 10. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =10 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c (1) i c /i b =50 (2) i c /i b =20 fig 11. collector-emitter saturation resistance as a function of collector current; typical values fig 12. collector-emitter saturation resistance as a function of collector current; typical values (1) (2) (3) 001aaa504 i c (ma) 10 - 1 10 4 10 3 110 2 10 10 - 1 1 v cesat (v) 10 - 2 006aaa988 i c (ma) 10 - 1 10 4 10 3 110 2 10 10 - 1 1 v cesat (v) 10 - 2 (1) (2) 001aaa501 i c (ma) 10 - 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( w ) 10 - 1 (1) (2) (3) 006aaa989 i c (ma) 10 - 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( w ) 10 - 1 (1) (2)
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 9 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor 8. test information fig 13. biss transistor switching time de?nition v cc =10v; i c = 0.5 a; i bon = 0.025 a; i boff = - 0.025 a fig 14. test circuit for switching times 006aaa003 i bon (100 %) i b input pulse (idealized waveform) i boff 90 % 10 % i c (100 %) i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mlb826 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 10 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . fig 15. package outline sot223 (sc-73) 04-11-10 dimensions in mm 6.7 6.3 3.1 2.9 1.8 1.5 7.3 6.7 3.7 3.3 1.1 0.7 13 2 4 4.6 2.3 0.8 0.6 0.32 0.22 table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 1000 4000 PBSS8110Z sot223 8 mm pitch, 12 mm tape and reel -115 -135
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 11 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor 11. soldering fig 16. re?ow soldering footprint sot223 (sc-73) fig 17. wave soldering footprint sot223 (sc-73) sot223_fr solder resist occupied area solder lands solder paste dimensions in mm 1.20 (4 ) 3.90 5.90 4.80 7.40 4 23 1 3.85 1.20 (3 ) 1.30 (3 ) 0.30 3.60 3.50 7.00 6.15 7.65 sot223_fw solder resist occupied area solder lands dimensions in mm transport direction during soldering 6.70 8.90 1.90 (2 ) 1.10 7.30 4.30 8.10 8.70 123 4
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 12 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor 12. revision history table 9. revision history document id release date data sheet status change notice supersedes PBSS8110Z_2 20070108 product data sheet - PBSS8110Z_1 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? section 1.1 gener al descr iption : amended ? section 1.2 f eatures : amended ? section 1.3 applications : amended ? t ab le 1 quic k ref erence data : conditions for i cm peak collector current adapted ? t ab le 1 : r cesat equivalent on-resistance rede?ned to collector-emitter saturation resistance ? t ab le 2 pinning : simpli?ed outline drawing amended ? t ab le 4 mar king codes : amended ? t ab le 5 limiting v alues : conditions for i cm peak collector current adapted ? t ab le 5 : t amb operating ambient temperature rede?ned to ambient temperature ? t ab le 6 ther mal char acter istics : amended ? t ab le 6 : r th(j-s) thermal resistance from junction to soldering point rede?ned to r th(j-sp) thermal resistance from junction to solder point ? figure 2 : amended ? figure 2 : z th transient thermal impedance rede?ned to z th(j-a) transient thermal impedance from junction to ambient ? figure 2 : t p pulse time rede?ned to pulse duration ? figure 3 and 4 : added ? t ab le 7 : r cesat equivalent on-resistance rede?ned to collector-emitter saturation resistance ? t ab le 7 : switching times added ? figure 5 , 6 , 8 and 12 : amended ? section 8 t est inf or mation : added ? figure 15 : superseded by minimized package outline drawing ? section 10 p ac king inf or mation : added ? section 11 solder ing : added ? section 13 legal inf or mation : updated PBSS8110Z_1 20040426 product data sheet - -
PBSS8110Z_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 8 january 2007 13 of 14 nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors PBSS8110Z 100 v, 1 a npn low v cesat (biss) transistor ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 8 january 2007 document identifier: PBSS8110Z_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 packing information. . . . . . . . . . . . . . . . . . . . . 10 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 contact information. . . . . . . . . . . . . . . . . . . . . 13 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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